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Creators/Authors contains: "Zijing Zhao and Wenjuan Zhu"

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  1. (, 52th IEEE Semiconductor Interface Specialists Conference)
    In this work, we investigated vertical transistors with thin MoTe2 channels. The top and bottom contacts are asymmetrically doped under the electrostatic bias from the back gate. Reconfigurable polarity is observed in the vertical transistor under different current directions. Our results demonstrate short channel vertical transistors based on 2D semiconductor MoTe2 and provide a simple way to achieve run-time reconfiguration without additional control gates, which will be helpful to the design of highly-scaled and high-efficient integrated circuits. 
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    Accepted Manuscript Full Text Available